| PART |
Description |
Maker |
| MT6C04AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| 2SC4245 E000921 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS
From old datasheet system
TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| JDP2S01S |
UHF~VHF Band RF Attenuator Applications 甚高频波段超高频射频衰减器的应用
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| CXA1664 CXA1664M |
ALL BAND TV TUNER IC (VHF-CATV-UHF) 所有带电视调谐器集成电路（甚高频，有线电视，超高频
All Band TV Tuner IC (VHF-CATV-UHF)
|
Sony, Corp.
SONY[Sony Corporation]
|
| EC3H02B |
VHF to UHF Low-Noise Wide-Band Amplifier Applications 甚高频到超高频低噪声宽带放大器应
NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications
|
Sanyo Electric Co., Ltd.
Sanyo Semicon Device
|
| NJM2275F1 NJM22751 |
VHF/UHF BAND RF AMPLIFIER
|
New Japan Radio
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| JDP2S02AFS07 JDP2S02AFS |
UHF~VHF Band RF Switch Applications
|
Toshiba Semiconductor
|
| JDP2S02AS |
UHF~VHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| CXA3095N |
All Band TV Tuner IC (VHF-CATV-UHF)
|
Sony Corporation
|
| 1SV128 |
VHF~UHF BAND RF ATTENUATOR APPLICATIONS
|
Guangdong Kexin Industrial Co.,Ltd
|
| JDP2S08SC |
UHF~VHF Band RF Switch Applications
|
Toshiba Semiconductor
|
